Si- and Mg-implanted InP, GaInAs and short-time proximity cap annealing
Identifieur interne : 000673 ( Main/Exploration ); précédent : 000672; suivant : 000674Si- and Mg-implanted InP, GaInAs and short-time proximity cap annealing
Auteurs : RBID : ISTEX:11664_1985_Article_BF02661225.pdfEnglish descriptors
Abstract
Si- and Mg-ions with energies of 180 keV have been implanted into semi-insulating InP substrates and low doped n- and p-type GalnAs epitaxial layers (3 · l016cm−3). Sheet resistances and doping profiles are analyzed and compared with LSS theory. Post-implantation annealing is studied with respect to encapsulation, time and temperature. We have tested as new encapsulation techniques for InP the simple proximity cap annealing and for GalnAs the As-doped spun-on SiO2. Proximity cap annealing yields decomposition-free surfaces when using a recessed capsubstrate. At annealing temperatures of around 800 °C less activation is obtained than with conventional PSG annealing and a surface accumulation of charge-carriers is established. A time limit of around 3 min is found for Si- and Mg-implanted InP, beyond which the sheet resistance no longer decreases and the doping saturates. For Si in InP, short-time annealing yields to a 68 % activation of carriers, not significantly higher than with conventional long-time annealing. In the case of Si in GalnAs, however, short-time annealing is much more effective. A 100 % activation is obtained for a dose of 2.1014 cm−2, while only 7 % is found for long annealing. Even at such a high dose of 1. 1016cm−2 we have achieved about an order of magnitude higher activation with short annealing than with long annealing.
DOI: 10.1007/BF02661225
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Si- and Mg-implanted InP, GaInAs and short-time proximity cap annealing</title><author><name>U. König</name><affiliation wicri:level="3"><mods:affiliation>AEG-TELEFUNKEN Forschungsinstitut, Postfach 1730, D-7900, Ulm, FRG</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>AEG-TELEFUNKEN Forschungsinstitut, Postfach 1730, D-7900, Ulm</wicri:regionArea><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName></affiliation></author><author><name>J. Hilgarth</name><affiliation wicri:level="1"><mods:affiliation>Telefunken electronic GmbH, Postfach 1109, D-7100, Heilbronn, FRG</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Telefunken electronic GmbH, Postfach 1109, D-7100, Heilbronn</wicri:regionArea><wicri:noRegion>Heilbronn</wicri:noRegion><wicri:noRegion>Heilbronn</wicri:noRegion></affiliation></author><author><name>H. H. Tiemann</name><affiliation wicri:level="1"><mods:affiliation>Telefunken electronic GmbH, Postfach 1109, D-7100, Heilbronn, FRG</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Telefunken electronic GmbH, Postfach 1109, D-7100, Heilbronn</wicri:regionArea><wicri:noRegion>Heilbronn</wicri:noRegion><wicri:noRegion>Heilbronn</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1985_Article_BF02661225.pdf</idno><date when="1985">1985</date><idno type="doi">10.1007/BF02661225</idno><idno type="wicri:Area/Main/Corpus">000986</idno><idno type="wicri:Area/Main/Curation">000986</idno><idno type="wicri:Area/Main/Exploration">000673</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ga0.47 In0.53As</term><term>Implantation</term><term>Indium phosphide</term><term>Proximity caps</term><term>Short annealing</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Si- and Mg-ions with energies of 180 keV have been implanted into semi-insulating InP substrates and low doped n- and p-type GalnAs epitaxial layers (3 · l016cm−3). Sheet resistances and doping profiles are analyzed and compared with LSS theory. Post-implantation annealing is studied with respect to encapsulation, time and temperature. We have tested as new encapsulation techniques for InP the simple proximity cap annealing and for GalnAs the As-doped spun-on SiO2. Proximity cap annealing yields decomposition-free surfaces when using a recessed capsubstrate. At annealing temperatures of around 800 °C less activation is obtained than with conventional PSG annealing and a surface accumulation of charge-carriers is established. A time limit of around 3 min is found for Si- and Mg-implanted InP, beyond which the sheet resistance no longer decreases and the doping saturates. For Si in InP, short-time annealing yields to a 68 % activation of carriers, not significantly higher than with conventional long-time annealing. In the case of Si in GalnAs, however, short-time annealing is much more effective. A 100 % activation is obtained for a dose of 2.1014 cm−2, while only 7 % is found for long annealing. Even at such a high dose of 1. 1016cm−2 we have achieved about an order of magnitude higher activation with short annealing than with long annealing.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="ac53e267c56055d0f266c67fbbc106fa84e20b01"><titleInfo lang="eng"><title>Si- and Mg-implanted InP, GaInAs and short-time proximity cap annealing</title></titleInfo><name type="personal"><namePart type="given">U.</namePart><namePart type="family">König</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>AEG-TELEFUNKEN Forschungsinstitut, Postfach 1730, D-7900, Ulm, FRG</affiliation></name><name type="personal"><namePart type="given">J.</namePart><namePart type="family">Hilgarth</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Telefunken electronic GmbH, Postfach 1109, D-7100, Heilbronn, FRG</affiliation></name><name type="personal"><namePart type="given">H. H.</namePart><namePart type="family">Tiemann</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Telefunken electronic GmbH, Postfach 1109, D-7100, Heilbronn, FRG</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1984-10-22</dateCreated><dateValid encoding="w3cdtf">2007-06-25</dateValid><copyrightDate encoding="w3cdtf">1985</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Si- and Mg-ions with energies of 180 keV have been implanted into semi-insulating InP substrates and low doped n- and p-type GalnAs epitaxial layers (3 · l016cm−3). Sheet resistances and doping profiles are analyzed and compared with LSS theory. Post-implantation annealing is studied with respect to encapsulation, time and temperature. We have tested as new encapsulation techniques for InP the simple proximity cap annealing and for GalnAs the As-doped spun-on SiO2. Proximity cap annealing yields decomposition-free surfaces when using a recessed capsubstrate. At annealing temperatures of around 800 °C less activation is obtained than with conventional PSG annealing and a surface accumulation of charge-carriers is established. A time limit of around 3 min is found for Si- and Mg-implanted InP, beyond which the sheet resistance no longer decreases and the doping saturates. For Si in InP, short-time annealing yields to a 68 % activation of carriers, not significantly higher than with conventional long-time annealing. In the case of Si in GalnAs, however, short-time annealing is much more effective. A 100 % activation is obtained for a dose of 2.1014 cm−2, while only 7 % is found for long annealing. Even at such a high dose of 1. 1016cm−2 we have achieved about an order of magnitude higher activation with short annealing than with long annealing.</abstract><subject lang="eng"><genre>Key words</genre><topic>Implantation</topic><topic>indium phosphide</topic><topic>Ga0.47 In0.53As</topic><topic>short annealing</topic><topic>proximity caps</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1985</partNumber><partNumber>Volume: 14</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1985-05-01</dateIssued><copyrightDate encoding="w3cdtf">1985</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 11</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1985</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02661225</identifier><identifier type="matrixNumber">Art7</identifier><identifier type="local">BF02661225</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>311</start><end>327</end></extent></part><recordInfo><recordOrigin>AIME, 1985</recordOrigin><recordIdentifier>11664_1985_Article_BF02661225.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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